Manufacturer Part Number
BFR92PE6327HTSA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Operates at high frequencies up to 5GHz
Provides gain of 10.5dB to 16dB
Exhibits a low noise figure of 1.4dB to 2dB at 900MHz to 1.8GHz
Supports a maximum collector current of 45mA
Withstands a maximum collector-emitter breakdown voltage of 15V
Product Advantages
Suitable for use in high-frequency RF circuits
Enables efficient signal amplification with low noise
Compact surface-mount package for space-saving design
Key Technical Parameters
Transistor Type: NPN
DC Current Gain (hFE): Minimum 70 at 15mA, 8V
Operating Temperature: Up to 150°C
Power Dissipation: Maximum 280mW
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable performance in a variety of applications
Compatibility
Packaged in the PG-SOT23 surface-mount package
Application Areas
Suitable for use in RF amplifiers, oscillators, and mixers in wireless communication systems
Applicable in radio, TV, and other high-frequency electronic devices
Product Lifecycle
Currently available, not nearing discontinuation
Replacements or upgrades may be available in the future as technology evolves
Key Reasons to Choose This Product
Excellent high-frequency performance with low noise
Compact and efficient surface-mount packaging
Reliable and environmentally-friendly design
Suitable for a wide range of RF and wireless applications
BFR92LT1AMI Semiconductor/onsemi