Manufacturer Part Number
BFR380FH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance NPN bipolar transistor for RF applications
Product Features and Performance
Optimized for use in RF power amplifier circuits
Excellent noise figure performance
High transition frequency of 14GHz
Gain of 9.5dB to 13.5dB
Noise figure of 1.1dB to 1.6dB at 1.8GHz to 3GHz
Product Advantages
Suitable for high-frequency, high-power RF applications
Robust and reliable performance
Key Technical Parameters
Power rating: 380mW
Collector-emitter breakdown voltage: 9V
Collector current: 80mA
DC current gain: 90 (min) at 40mA, 3V
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Surface mount package (SOT-723)
Compatible with various RF circuit designs
Application Areas
Wireless communication systems
Cellular base stations
Radar systems
Satellite communications
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available as technology evolves
Several Key Reasons to Choose This Product
High-performance RF characteristics
Excellent noise figure and gain performance
Robust and reliable operation
Compatibility with a wide range of RF circuit designs
Compliance with RoHS3 regulations
BFR460L3E6327
BFR505Freescale / NXP Semiconductors
BFR505TLUMILEDS