Manufacturer Part Number
BFR35APE6327
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor Bipolar (BJT) RF
Product Features and Performance
Automotive, AEC-Q101 qualified
High operating temperature of 150°C
Power rating of 280mW
Collector-Emitter Breakdown Voltage of 15V
Collector Current (Ic) of 45mA
High Gain of 16dB
Low Noise Figure of 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
High Transition Frequency of 5GHz
Product Advantages
Robust design for automotive applications
Excellent high-frequency performance
Low noise characteristics
Key Technical Parameters
NPN Transistor Type
DC Current Gain (hFE) of 70 @ 15mA, 8V
Surface Mount Packaging
Quality and Safety Features
RoHS compliant
AEC-Q101 qualified
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Application Areas
RF and high-frequency circuits
Automotive electronics
Wireless communications
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose
Robust and reliable performance for automotive applications
High-frequency capabilities for wireless and RF designs
Low noise characteristics for sensitive circuits
Compact and industry-standard packaging
