Manufacturer Part Number
BFR340FH6327
Manufacturer
Infineon Technologies
Introduction
High-frequency NPN bipolar transistor
Suitable for RF applications
Product Features and Performance
Operates at up to 150°C junction temperature
Capable of handling up to 75mW of power
Supports voltages up to 9V collector-emitter breakdown
Supports collector currents up to 20mA
Offers high current gain of at least 90 at 5mA, 3V
Transition frequency of 14GHz
Power gain of 28dB
Low noise figure of 0.9dB to 1.2dB at 100MHz to 2.4GHz
Product Advantages
Excellent high-frequency performance
High power handling capability
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 9V (max)
Collector Current: 20mA (max)
DC Current Gain: 90 (min) @ 5mA, 3V
Transition Frequency: 14GHz
Power Gain: 28dB
Noise Figure: 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Quality and Safety Features
RoHS compliance status not specified
Compatibility
Suitable for various RF and high-frequency applications
Application Areas
Radio Frequency (RF) circuits
Wireless communications
High-frequency amplifiers
Product Lifecycle
Current product offering, no information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent high-frequency performance with 14GHz transition frequency
High power handling capability of up to 75mW
Wide operating temperature range up to 150°C
Compact surface mount package
Low noise figure of 0.9dB to 1.2dB at 100MHz to 2.4GHz
High current gain of at least 90 at 5mA, 3V
BFR280T-GS08Electro-Films (EFI) / Vishay