BFR340FH6327 - Infineon Technologies

Manufacturer Part Number

BFR340FH6327

Manufacturer

Infineon Technologies

Introduction

High-frequency NPN bipolar transistor

Suitable for RF applications

Product Features and Performance

Operates at up to 150°C junction temperature

Capable of handling up to 75mW of power

Supports voltages up to 9V collector-emitter breakdown

Supports collector currents up to 20mA

Offers high current gain of at least 90 at 5mA, 3V

Transition frequency of 14GHz

Power gain of 28dB

Low noise figure of 0.9dB to 1.2dB at 100MHz to 2.4GHz

Product Advantages

Excellent high-frequency performance

High power handling capability

Wide operating temperature range

Compact surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 9V (max)

Collector Current: 20mA (max)

DC Current Gain: 90 (min) @ 5mA, 3V

Transition Frequency: 14GHz

Power Gain: 28dB

Noise Figure: 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz

Quality and Safety Features

RoHS compliance status not specified

Compatibility

Suitable for various RF and high-frequency applications

Application Areas

Radio Frequency (RF) circuits

Wireless communications

High-frequency amplifiers

Product Lifecycle

Current product offering, no information on discontinuation or replacements

Key Reasons to Choose This Product

Excellent high-frequency performance with 14GHz transition frequency

High power handling capability of up to 75mW

Wide operating temperature range up to 150°C

Compact surface mount package

Low noise figure of 0.9dB to 1.2dB at 100MHz to 2.4GHz

High current gain of at least 90 at 5mA, 3V