BFQ19SH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BFQ19SH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

High-frequency NPN bipolar transistor for radio frequency (RF) applications

Product Features and Performance

Designed for high-frequency and high-gain applications

Excellent noise figure of 3dB at 1.8GHz

Transition frequency (fT) of 5.5GHz

Power handling up to 1W

Collector-emitter breakdown voltage up to 15V

Collector current up to 120mA

DC current gain (hFE) of at least 70 at 70mA and 8V

Product Advantages

Suitable for high-frequency RF amplifier and oscillator circuits

Robust design for reliable operation

Small footprint in PG-SOT89 surface mount package

Key Technical Parameters

Transistor Type: NPN

Operating Temperature: 150°C (TJ)

Package: PG-SOT89, Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant

Compatibility

Compatible with various RF and wireless communication applications

Application Areas

RF amplifiers

Oscillators

Wireless communication systems

Product Lifecycle

Currently available product

Replacements or upgrades may become available in the future

Several Key Reasons to Choose This Product

High-frequency performance with excellent noise figure

Robust design for reliable operation

Compact surface mount package

Suitable for a wide range of RF and wireless applications