Manufacturer Part Number
BFP640E6327
Manufacturer
Infineon Technologies
Introduction
The BFP640E6327 is a high-performance NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Operates at high frequencies up to 40GHz
Provides a gain of 24dB
Exhibits a low noise figure of 0.65dB to 1.2dB across the frequency range of 1.8GHz to 6GHz
Capable of handling up to 50mA of collector current
Supports a maximum collector-emitter breakdown voltage of 4.5V
Operates at a maximum junction temperature of 150°C
Product Advantages
Excellent high-frequency performance
Low noise characteristics
High current handling capability
Compact surface-mount package
Key Technical Parameters
Frequency Transition: 40GHz
Gain: 24dB
Noise Figure: 0.65dB to 1.2dB @ 1.8GHz to 6GHz
Collector Current (Max): 50mA
Collector-Emitter Breakdown Voltage (Max): 4.5V
Junction Temperature (Max): 150°C
Quality and Safety Features
Robust design for reliable operation
Complies with relevant industry standards
Compatibility
Suitable for various RF and wireless communication applications
Application Areas
Radio frequency (RF) amplifiers
Wireless communication systems
Radar and satellite communication systems
Product Lifecycle
Currently available and actively supported by the manufacturer
No known plans for discontinuation or replacement at this time
Several Key Reasons to Choose This Product
Exceptional high-frequency performance with a transition frequency of 40GHz
Low noise characteristics, ensuring clean signal amplification
High current handling capability for versatile applications
Compact surface-mount package for efficient board integration
Reliable and robust design for long-term, dependable operation
