Manufacturer Part Number
BFP540ESDH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
NPN Bipolar Transistor
Designed for RF applications
Product Features and Performance
High transition frequency of 30GHz
High current gain of 50
Low noise figure of 0.9dB to 1.4dB at 1.8GHz
High power handling capability of 250mW
Wide operating temperature range up to 150°C
Product Advantages
Excellent high-frequency performance
Robust and reliable design
Suitable for a variety of RF applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 5V
Collector Current (Max): 80mA
DC Current Gain (hFE): 50 @ 20mA, 3.5V
Transition Frequency: 30GHz
Gain: 21.5dB
Noise Figure: 0.9dB to 1.4dB @ 1.8GHz
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Surface mount package (SC-82A, SOT-343)
Tape and reel packaging
Application Areas
Suitable for a wide range of RF applications, such as:
- Wireless communications
- Radar systems
- Satellite communications
- Test and measurement equipment
Product Lifecycle
The BFP540 is an active and widely used product in the Infineon Technologies portfolio.
Replacements and upgrades are available, ensuring long-term support and availability.
Several Key Reasons to Choose This Product
Excellent high-frequency performance with a transition frequency of 30GHz
Low noise figure of 0.9dB to 1.4dB at 1.8GHz, enabling high-quality signal amplification
High power handling capability of 250mW, making it suitable for various RF applications
Robust and reliable design, with a wide operating temperature range up to 150°C
Availability of replacements and upgrades, ensuring long-term product support
BFP540 L6327INFINEO