Manufacturer Part Number
BFP520H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-frequency bipolar transistor suitable for RF and microwave applications
Product Features and Performance
High transition frequency of 45GHz
Low noise figure of 0.95dB at 1.8GHz
High gain of 22.5dB
Collector-emitter voltage up to 3.5V
Collector current up to 40mA
Power dissipation up to 100mW
Operating temperature up to 150°C
Product Advantages
Excellent high-frequency performance
Low noise characteristics
Compact surface mount package
Suitable for a wide range of RF and microwave applications
Key Technical Parameters
Transistor type: NPN bipolar
DC current gain (hFE): 70 min @ 20mA, 2V
Transition frequency (fT): 45GHz
Noise figure: 0.95dB @ 1.8GHz
Collector-emitter breakdown voltage: 3.5V max
Collector current: 40mA max
Power dissipation: 100mW max
Operating temperature: -55°C to 150°C
Quality and Safety Features
ROHS3 compliant
Qualified for industrial and commercial applications
Compatibility
Surface mount package (SC-82A, SOT-343)
Tape and reel packaging
Application Areas
RF and microwave amplifiers
Mixers
Oscillators
Switches
Instrumentation and test equipment
Product Lifecycle
Currently in production
Replacement or upgrade options available from Infineon
Several Key Reasons to Choose This Product
Excellent high-frequency performance with 45GHz transition frequency
Low noise figure of 0.95dB at 1.8GHz
High gain of 22.5dB
Compact surface mount package for easy integration
Wide operating temperature range up to 150°C
ROHS3 compliant for environmental compatibility
Proven reliability and quality from Infineon Technologies
