Manufacturer Part Number
BFP183WH6327
Manufacturer
Infineon Technologies
Introduction
High-frequency bipolar transistor for RF applications
Product Features and Performance
Designed for operation up to 8 GHz
High transition frequency of 8 GHz
Low noise figure of 0.9 dB to 1.4 dB at 900 MHz to 1.8 GHz
High power gain of 22 dB
Product Advantages
Suitable for high-frequency amplifier and mixer applications
Excellent noise performance
Robust design for automotive and industrial applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 12V
Collector Current (IC): 65mA
Power Dissipation: 450mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS compliant
Compatibility
Surface mount package (SC-82A, SOT-343)
Compatible with standard SMT assembly processes
Application Areas
Radio frequency (RF) amplifiers
Mixers
Oscillators
Automotive electronic systems
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Infineon
Key Reasons to Choose
High-frequency performance up to 8 GHz
Excellent noise figure and power gain
Robust design for automotive and industrial use
AEC-Q101 qualification for reliability in harsh environments
Compatibility with standard surface mount assembly
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