Manufacturer Part Number
BFN26E6327
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Transistor - Bipolar (BJT) - Single
Product Features and Performance
High voltage capability up to 300V
Low power dissipation of 360mW
High current handling up to 200mA
High current gain (hFE) of min. 30 @ 30mA, 10V
Wide operating temperature range up to 150°C
High transition frequency of 70MHz
Product Advantages
Excellent voltage and current handling capabilities
Efficient power dissipation for compact designs
Reliable performance in high temperature environments
Suitable for high-speed switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 300V
Collector Current (Max): 200mA
Collector Cutoff Current (Max): 100nA
Collector-Emitter Saturation Voltage (Max): 500mV
DC Current Gain (Min): 30
Transition Frequency: 70MHz
Quality and Safety Features
Compliant with AEC-Q101 automotive industry standard
RoHS compliance status not applicable
Compatibility
Surface mount package (TO-236-3, SC-59, SOT-23-3)
Interchangeable with similar transistor models
Application Areas
Power supplies
Switching circuits
Amplifier circuits
Automotive electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities
Efficient power dissipation for compact designs
Reliable performance in high temperature environments
Suitable for high-speed switching applications
Compliant with automotive industry standard AEC-Q101
Availability of replacement or upgrade options from the manufacturer
