Manufacturer Part Number
BCX55-16E6327
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT)
Product Features and Performance
Automotive-grade, AEC-Q101 qualified
High power handling capability up to 2W
High collector-emitter breakdown voltage up to 60V
High collector current up to 1A
Low collector-base leakage current of max. 100nA
Low collector-emitter saturation voltage of max. 500mV
Wide operating temperature range up to 150°C
Product Advantages
Rugged and reliable performance
Suitable for high-power, high-voltage automotive applications
Excellent thermal management
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 60V
Current Collector (Ic) (Max): 1A
Power Max: 2W
Frequency Transition: 100MHz
Quality and Safety Features
RoHS3 compliant
Automotive-grade, AEC-Q101 qualified
Compatibility
Compatible with various automotive and industrial applications
Application Areas
Automotive electronics
Industrial power supplies
Switching and amplifier circuits
Product Lifecycle
This product is an active and widely available part
Replacements and upgrades are readily accessible
Key Reasons to Choose This Product
Robust and reliable performance in high-power, high-voltage applications
Automotive-grade quality and safety compliance
Excellent thermal management and high power handling capability
Suitable for a wide range of automotive and industrial applications