BCW61CE6327 - Infineon Technologies

Manufacturer Part Number

BCW61CE6327

Manufacturer

Infineon Technologies

Introduction

The BCW61CE6327 is a PNP bipolar junction transistor (BJT) from Infineon Technologies designed for a wide range of general-purpose applications.

Product Features and Performance

High current gain (hFE) of at least 250 at 2 mA and 5 V

High transition frequency of 250 MHz

Low collector-emitter saturation voltage (VCE(sat)) of 550 mV at 1.25 mA and 50 mA

Low collector cutoff current (ICBO) of 20 nA

Compact and space-saving TO-236-3 (SOT-23-3) package

Product Advantages

Excellent high-frequency performance

Efficient power handling capabilities

Compact and surface-mountable package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 32 V

Current Collector (Ic) (Max): 100 mA

Power Max: 330 mW

Operating Temperature: 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with standard SOT-23-3 footprint and assembly processes

Application Areas

Analog and digital electronics

Switching and amplifier circuits

Power management

Consumer electronics

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement or upgrade parts available

Key Reasons to Choose This Product

Excellent high-frequency performance for efficient circuit design

Compact and space-saving package for dense PCB layouts

Reliable and long-lasting operation due to robust design and Infineon quality

RoHS compliance for environmentally friendly applications