Manufacturer Part Number
BCW60DE6327
Manufacturer
Infineon Technologies
Introduction
The BCW60DE6327 is a high-performance NPN bipolar junction transistor (BJT) designed for a variety of electronic applications.
Product Features and Performance
High current capability up to 100 mA
Low collector-emitter saturation voltage of 550 mV
High current gain (hFE) of 380 minimum
High transition frequency of 250 MHz
Wide collector-emitter breakdown voltage of 32 V
Low collector cutoff current of 20 nA
Suitable for high-speed switching and amplifier circuits
Product Advantages
Excellent high-frequency performance
High current handling capability
Low power consumption
Compact surface-mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 32 V
Collector Current (IC): 100 mA
Collector Cutoff Current (ICBO): 20 nA
Current Gain (hFE): 380 minimum
Transition Frequency (fT): 250 MHz
Power Dissipation: 330 mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable performance in high-temperature environments
Compatibility
The BCW60DE6327 is compatible with a wide range of electronic circuits and can be used as a replacement for similar NPN bipolar transistors.
Application Areas
High-speed switching circuits
Amplifier circuits
Power supply circuits
Telecommunication equipment
Industrial control systems
Product Lifecycle
The BCW60DE6327 is an active product, and Infineon Technologies continues to manufacture and support it. Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Excellent high-frequency performance for high-speed applications
High current handling capability for power-intensive circuits
Low power consumption for energy-efficient designs
Compact surface-mount package for space-constrained applications
Reliable performance in high-temperature environments
RoHS3 compliance for environmentally-friendly usage
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