BCV47E6327HTSA1 - Infineon Technologies

Manufacturer Part Number

BCV47E6327HTSA1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

Manufacturer's packaging: PG-SOT23

Base Product Number: BCV47

Package / Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: PG-SOT23

Package: Tape & Reel (TR)

Operating Temperature: 150°C (TJ)

Power Max: 360 mW

Voltage Collector Emitter Breakdown (Max): 60 V

Current Collector (Ic) (Max): 500 mA

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 1V @ 100A, 100mA

Transistor Type: NPN Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V

Frequency Transition: 170MHz

Mounting Type: Surface Mount

Product Advantages

RoHS3 Compliant

High power handling capability

High current gain

High frequency performance

Surface mount package

Key Technical Parameters

Power Rating: 360 mW

Collector-Emitter Breakdown Voltage: 60 V

Collector Current (max): 500 mA

Current Gain (min): 10,000

Transition Frequency: 170 MHz

Quality and Safety Features

RoHS3 Compliant

Reliable performance under high temperature operation (up to 150°C)

Compatibility

Suitable for a wide range of electronic circuits and applications that require a high-performance bipolar transistor

Application Areas

Amplifiers

Switches

Drivers

Power supplies

Product Lifecycle

This product is currently in production and available for purchase.

Replacements or upgrades may become available in the future as technology advances.

Several Key Reasons to Choose This Product

High power handling capability of up to 360 mW

Excellent current gain of 10,000 or more, enabling efficient power amplification

High-frequency performance up to 170 MHz, suitable for high-speed applications

Surface mount package for compact and efficient circuit design

RoHS3 compliance for environmentally-friendly use

Reliable operation at high temperatures up to 150°C