Manufacturer Part Number
BCR35PNH6433
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
Bipolar junction transistor (BJT) array with pre-biased configuration
Product Features and Performance
Pre-biased NPN and PNP transistor pair
Optimized for automotive applications
High transition frequency of 150MHz
Low collector-emitter saturation voltage
Product Advantages
Compact surface mount package
Integrated resistor network for biasing
Automotive-grade reliability (AEC-Q101 qualified)
Suitable for high-speed switching applications
Key Technical Parameters
Power rating: 250mW
Collector-emitter breakdown voltage: 50V
Collector current (max): 100mA
DC current gain (hFE): Minimum 70 @ 5mA, 5V
Quality and Safety Features
RoHS compliance (status not specified)
Supplier packaging: Bulk
Compatibility
Suitable for automotive and industrial applications
Application Areas
High-speed switching circuits
Amplifier circuits
Automotive electronics
Product Lifecycle
Current product, no discontinuation information available
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Optimized for automotive applications with AEC-Q101 qualification
Integrated resistor network simplifies circuit design
High transition frequency and low saturation voltage for efficient switching
Compact surface mount package for space-constrained designs
Automotive-grade reliability and quality
BCR3AS-12ARenesas Electronics Corporation