Manufacturer Part Number
BCR191E6327
Manufacturer
Infineon Technologies
Introduction
Pre-Biased PNP Bipolar Junction Transistor (BJT) for Automotive Applications
Product Features and Performance
High-frequency operation up to 200 MHz
Low collector-emitter saturation voltage of 300 mV at 10 mA
Collector current up to 100 mA
Low collector cutoff current of 100 nA
Integrated base and emitter resistors of 22 kOhms each
Product Advantages
Improved switching performance
Reduced power consumption
Compact surface mount package
Suitable for automotive and industrial applications
Key Technical Parameters
Power rating: 200 mW
Collector-emitter breakdown voltage: 50 V
Current gain (hFE): Minimum 50 at 5 mA, 5 V
Transition frequency: 200 MHz
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Analog and mixed-signal applications
Product Lifecycle
Active product, no plans for discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose
Excellent high-frequency performance
Low power consumption and saturation voltage
Robust design for automotive and industrial use
Easy integration in compact surface mount packages
