Manufacturer Part Number
BCR185E6327
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single, Pre-Biased
Product Features and Performance
200 mW Power Rating
50 V Collector-Emitter Breakdown Voltage
100 mA Collector Current Rating
100 nA Collector Cutoff Current
300 mV Collector-Emitter Saturation Voltage
70 DC Current Gain (hFE)
200 MHz Transition Frequency
10 kOhm Base Resistor
47 kOhm Emitter-Base Resistor
Product Advantages
Pre-biased for simplified circuit design
Automotive-grade with AEC-Q101 qualification
Surface mount package for efficient board layout
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 500 μA, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5 mA, 5 V
Frequency Transition: 200 MHz
Resistor Base (R1): 10 kOhms
Resistor Emitter Base (R2): 47 kOhms
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Surface mount design
Application Areas
Automotive electronics
General-purpose amplifier and switch applications
Product Lifecycle
Current production, no known discontinuation plans
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Automotive-grade reliability and performance
Simplified circuit design with pre-biased transistor
Compact surface mount package for efficient board layout
Wide range of technical parameters to fit various application needs
Proven quality and safety with RoHS3 compliance
