Manufacturer Part Number
BCR142E6327
Manufacturer
Infineon Technologies
Introduction
The BCR142E6327 is a pre-biased NPN transistor from Infineon Technologies, designed for use in automotive and industrial applications.
Product Features and Performance
Power rating of up to 200 mW
Collector-emitter breakdown voltage of up to 50 V
Collector current (IC) up to 100 mA
Collector cutoff current (ICBO) of max. 100 nA
Vce saturation voltage of max. 300 mV @ 10 mA, 500 μA
DC current gain (hFE) of min. 70 @ 5 mA, 5 V
Transition frequency of 150 MHz
Integrated base-emitter resistor network (R1 = 22 kΩ, R2 = 47 kΩ)
Product Advantages
Pre-biased design for simplified circuit design
Suitable for automotive and industrial applications
Compact surface-mount package
RoHS compliant
Key Technical Parameters
Power rating: 200 mW
Collector-emitter breakdown voltage: 50 V
Collector current: 100 mA
Collector cutoff current: 100 nA
Vce saturation voltage: 300 mV
DC current gain: 70
Transition frequency: 150 MHz
Integrated base-emitter resistor network
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
The BCR142E6327 is compatible with various automotive and industrial electronic systems.
Application Areas
Automotive electronics (e.g., control units, sensors)
Industrial control and monitoring equipment
General-purpose amplifier and switching applications
Product Lifecycle
The BCR142E6327 is an active product and there are no plans for discontinuation or replacement at this time.
Several Key Reasons to Choose This Product
Pre-biased design for simplified circuit design
Suitable for automotive and industrial applications
Compact surface-mount package
RoHS compliance and AEC-Q101 qualification
Reliable performance with key technical parameters, including high power rating, voltage, current, and frequency capabilities
