Manufacturer Part Number
BCR135WH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Single, Pre-Biased
Product Features and Performance
Power Max: 250 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
Transistor Type: NPN Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency Transition: 150 MHz
Resistor Base (R1): 10 kOhms
Resistor Emitter Base (R2): 47 kOhms
Product Advantages
RoHS3 Compliant
Surface Mount Mounting Type
Tape & Reel (TR) Packaging
Key Technical Parameters
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and applications that require a pre-biased NPN bipolar transistor.
Application Areas
Suitable for a wide range of electronic circuits and applications that require a pre-biased NPN bipolar transistor.
Product Lifecycle
This product is an active and available part from the manufacturer.
Key Reasons to Choose This Product
RoHS3 compliance for environmental safety
Compact surface mount package
Pre-biased NPN bipolar transistor with high performance specifications
Suitable for a variety of electronic circuit applications
BCR135T