Manufacturer Part Number
BCR133E6327HTSA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single, Pre-Biased
Product Features and Performance
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 300 mV
DC Current Gain (hFE): 30 (min)
Transition Frequency: 130 MHz
Base Resistor: 10 kOhms
Emitter-Base Resistor: 10 kOhms
Product Advantages
Pre-biased for simplified circuit design
High breakdown voltage for versatile applications
Low saturation voltage for efficient switching
High transition frequency for high-speed operation
Key Technical Parameters
Transistor Type: NPN Pre-Biased
Package: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for use in amplifiers, switches, logic gates, and other electronic circuits
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Optimized performance characteristics for efficient and reliable operation
Compact surface mount package for space-constrained designs
Pre-biased design simplifies circuit implementation
RoHS compliance for environmentally-friendly applications
BCR12PM-8LMITSUBISHI