Manufacturer Part Number
BCR112E6327HTSA1
Manufacturer
Infineon Technologies
Introduction
The BCR112E6327HTSA1 is a discrete semiconductor product, specifically a pre-biased NPN bipolar junction transistor (BJT) in a surface-mount package.
Product Features and Performance
200 mW maximum power dissipation
50 V maximum collector-emitter breakdown voltage
100 mA maximum collector current
100 nA maximum collector cutoff current (ICBO)
300 mV maximum collector-emitter saturation voltage @ 500 μA, 10 mA
20 minimum DC current gain (hFE) @ 5 mA, 5 V
140 MHz transition frequency
7 kOhms base and emitter-base resistors
Product Advantages
Pre-biased design for simplified circuit design
Small surface-mount package for compact applications
High-frequency performance for various electronic applications
Key Technical Parameters
Voltage, current, and power ratings
Frequency and gain characteristics
Integrated base and emitter-base resistors
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Compatible with surface-mount assembly processes
Application Areas
Amplifiers
Switches
Logic gates
Biasing circuits
General-purpose electronic applications
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available from Infineon or other manufacturers
Several Key Reasons to Choose This Product
Pre-biased design for simplified circuit design
Small surface-mount package for compact applications
High-frequency performance for various electronic applications
Robust technical specifications and quality/safety features
Compatibility with standard surface-mount assembly processes
Ongoing availability and potential replacement/upgrade options
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