Manufacturer Part Number
BCR108WE6327
Manufacturer
Infineon Technologies
Introduction
The BCR108WE6327 is a single, pre-biased NPN bipolar junction transistor (BJT) from Infineon Technologies.
Product Features and Performance
Designed for automotive and industrial applications
Optimized for high-speed switching and amplification
High transition frequency of 170 MHz
Low collector-emitter saturation voltage of 300 mV
Product Advantages
Pre-biased for simplified circuit design
Reliable operation in high-stress environments
Robust surface-mount packaging
Key Technical Parameters
Power rating: 250 mW
Collector-emitter breakdown voltage: 50 V
Collector current (max): 100 mA
DC current gain (hFE): 70 (min)
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualification
Compatibility
This transistor is compatible with a wide range of electronic circuits and applications.
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Switching and amplification applications
Product Lifecycle
The BCR108WE6327 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Proven performance and reliability in automotive and industrial applications
Simplified circuit design with pre-biased configuration
Robust surface-mount packaging for increased resilience
High-frequency operation up to 170 MHz
Compliance with RoHS3 and AEC-Q101 standards