BCM846SH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BCM846SH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

The BCM846SH6327XTSA1 is a dual NPN bipolar junction transistor (BJT) array in a 6-VSSOP, SC-88, SOT-363 package.

Product Features and Performance

2 NPN transistors in a single package

Capable of operating at up to 150°C junction temperature

Provides a maximum power dissipation of 250mW

Offers a maximum collector-emitter breakdown voltage of 65V

Supports a maximum collector current of 100mA

Provides a minimum DC current gain (hFE) of 200 at 2mA, 5V

Achieves a transition frequency of 250MHz

Product Advantages

Compact 6-VSSOP, SC-88, SOT-363 surface mount package

Dual transistor design saves board space

Suitable for high-temperature applications

Capable of handling high voltages and currents

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 65V

Collector Current (Max): 100mA

DC Current Gain (Min): 200 @ 2mA, 5V

Transition Frequency: 250MHz

Power Dissipation (Max): 250mW

Operating Temperature (Max): 150°C

Quality and Safety Features

RoHS3 compliant

Supplied in Tape and Reel packaging

Compatibility

Suitable for surface mount applications

Application Areas

Analog and digital circuits

Switching and amplifier circuits

Power management applications

Product Lifecycle

The BCM846SH6327XTSA1 is an active product, and there are no immediate plans for discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Key Reasons to Choose This Product

Compact and space-saving dual transistor design

Capable of high-temperature operation up to 150°C

High voltage and current handling capabilities

Good DC current gain and transition frequency

RoHS3 compliance for environmental sustainability

Available in Tape and Reel packaging for efficient assembly