BC857BWH6327 - Infineon Technologies

Manufacturer Part Number

BC857BWH6327

Manufacturer

Infineon Technologies

Introduction

The BC857BWH6327 is a small-signal PNP bipolar junction transistor (BJT) in a surface-mount SC-70 package. It is designed for general-purpose amplifier and switching applications.

Product Features and Performance

High current gain (hFE) of 220 minimum at 2 mA, 5 V

High transition frequency of 250 MHz

Low collector-emitter saturation voltage (Vce(sat)) of 650 mV at 5 mA, 100 mA

Low collector cutoff current (ICBO) of 15 nA maximum

Power rating of 250 mW

Wide collector-emitter breakdown voltage of 45 V

Product Advantages

Compact surface-mount package

RoHS-compliant

Suitable for various amplifier and switching applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 15 nA

DC Current Gain (hFE): 220 minimum

Transition Frequency (fT): 250 MHz

Collector-Emitter Saturation Voltage (Vce(sat)): 650 mV

Power Dissipation (Ptot): 250 mW

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

ESD protection

Compatibility

Suitable for surface-mount applications

Can be used in a variety of electronic circuits and devices

Application Areas

General-purpose amplifier and switching applications

Audio amplifiers

Switches

Biasing circuits

Product Lifecycle

The BC857BWH6327 is an active product and is not nearing discontinuation.

Replacements and upgrades may be available from Infineon or other manufacturers.

Several Key Reasons to Choose This Product

Excellent electrical performance with high current gain, low saturation voltage, and high transition frequency

Compact surface-mount package for space-saving design

RoHS compliance for environmentally friendly applications

Broad compatibility and suitability for a wide range of electronic circuits and devices

Availability of replacement and upgrade options from the manufacturer or other sources