BC857AE6327 - Infineon Technologies

Manufacturer Part Number

BC857AE6327

Manufacturer

Infineon Technologies

Introduction

The BC857AE6327 is a single PNP bipolar junction transistor (BJT) from Infineon Technologies.

Product Features and Performance

Operates at a maximum collector-emitter voltage of 45V

Supports a maximum collector current of 100mA

Exhibits a minimum DC current gain (hFE) of 125 at 2mA and 5V

Has a transition frequency of 250MHz

Capable of dissipating up to 330mW of power

Product Advantages

Compact surface mount package

RoHS3 compliant

Wide operating temperature range up to 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 45V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 15nA

Collector-Emitter Saturation Voltage (Max): 650mV

Quality and Safety Features

Complies with RoHS3 directive

Tested and qualified for reliable operation

Compatibility

Can be used in a wide range of electronic circuits and applications

Application Areas

Suitable for use in amplifiers, switches, and other analog and digital circuits

Product Lifecycle

Currently in production

Replacement or upgrade options available from Infineon

Key Reasons to Choose This Product

Robust performance characteristics

Compact and space-efficient surface mount package

Compliance with RoHS environmental regulations

Wide operating temperature range

Availability of replacement and upgrade options