Manufacturer Part Number
BC856SH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product - Bipolar Transistor Array
Product Features and Performance
2 PNP Transistors
High Transition Frequency of 250MHz
Low Collector-Emitter Saturation Voltage of 650mV @ 5mA, 100mA
High DC Current Gain (hFE) of 200 @ 2mA, 5V
Low Collector Cutoff Current of 15nA (ICBO)
Maximum Collector Current of 100mA
Maximum Collector-Emitter Voltage of 65V
Maximum Power Dissipation of 250mW
Operating Temperature Range up to 150°C
Product Advantages
High-performance transistor array in a small package
Suitable for space-constrained applications
Excellent electrical characteristics for analog and digital circuit design
Key Technical Parameters
Transistor Type: 2 PNP
Package: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of analog and digital circuit applications
Application Areas
Audio and video equipment
Power supplies
Sensors and control systems
Telecommunications equipment
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High-performance transistor array with excellent electrical characteristics
Compact and space-efficient package suitable for miniaturized designs
Reliable and RoHS3 compliant for use in various applications
Availability of replacement and upgrade options from the manufacturer