Manufacturer Part Number
BC817K40E6433HTMA1
Manufacturer
Infineon Technologies
Introduction
NPN Bipolar Junction Transistor (BJT)
Small signal transistor for general-purpose applications
Product Features and Performance
Wide operating temperature range up to 150°C
Low collector-emitter saturation voltage
High current gain of 250 (min) at 100mA, 1V
High transition frequency of 170MHz
Product Advantages
Reliable and robust performance
Suitable for various electronic circuit designs
Compact surface mount package
Key Technical Parameters
Package: TO-236-3, SC-59, SOT-23-3
Collector-Emitter Breakdown Voltage: 45V (max)
Collector Current: 500mA (max)
Power Dissipation: 500mW (max)
DC Current Gain (hFE): 250 (min) at 100mA, 1V
Quality and Safety Features
RoHS3 compliant
Reliable and stable operation
Compatibility
Suitable for use in a wide range of electronic devices and circuits
Application Areas
General-purpose amplifier and switching applications
Audio equipment
Power supplies
Consumer electronics
Product Lifecycle
Currently available product
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Reliable and robust performance in high-temperature environments
Compact surface mount package for space-constrained designs
High current gain and transition frequency for efficient circuit operation
RoHS compliance for environmentally-friendly applications