Manufacturer Part Number
BAT6404WH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor device
High-speed Schottky diode array
Product Features and Performance
Optimized for automotive applications
Meets AEC-Q101 qualification requirements
Low forward voltage drop
Fast reverse recovery time
High current capability
Compact surface-mount package
Product Advantages
Improved efficiency in power conversion circuits
Reliable performance in harsh automotive environments
Space-saving design
Key Technical Parameters
Reverse Leakage Current: 2 A @ 30 V
Forward Voltage Drop: 750 mV @ 100 mA
Reverse Voltage: 40 V
Reverse Recovery Time: 5 ns
Operating Temperature: -40°C to 150°C
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality
Compatibility
Suitable for use in a wide range of automotive electronic systems
Application Areas
Automotive electronics
Power supplies
Switching circuits
Freewheeling diodes
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Optimized for reliable performance in automotive applications
Compact surface-mount package for space-saving design
Low forward voltage drop and fast reverse recovery for improved efficiency
Meets stringent automotive quality and reliability standards (AEC-Q101)
Robust operating temperature range (-40°C to 150°C)
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