Manufacturer Part Number
BAT18-05E6327
Manufacturer
Infineon Technologies
Introduction
The BAT18-05E6327 is a high-performance radio frequency (RF) PIN diode from Infineon Technologies.
Product Features and Performance
Operates at a maximum junction temperature of 150°C
Exhibits low capacitance of 1 pF at 20V, 1 MHz
Offers a maximum peak reverse voltage of 35V
Provides a resistance of 700 mΩ at 5 mA, 200 MHz
Supports a maximum current of 100 mA
Product Advantages
Suitable for RF switching and attenuator applications
Delivers excellent high-frequency performance
Enables compact and efficient circuit designs
Reliable operation in harsh environments
Key Technical Parameters
Capacitance: 1 pF @ 20V, 1 MHz
Peak Reverse Voltage: 35V
Resistance: 700 mΩ @ 5 mA, 200 MHz
Maximum Current: 100 mA
Operating Temperature: 150°C (TJ)
Quality and Safety Features
Compliant with RoHS 3 directive
Housed in the PG-SOT23 package
Compatibility
Compatible with TO-236-3, SC-59, and SOT-23-3 package types
Application Areas
RF switching circuits
RF attenuator circuits
Wireless communication systems
Test and measurement equipment
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent high-frequency performance
Compact and efficient design
Reliable operation in harsh environments
Compliance with RoHS 3 directive
Wide range of compatible package options