Manufacturer Part Number
BAR81WE6327
Manufacturer
Infineon Technologies
Introduction
High-frequency, low-capacitance Schottky diode
Product Features and Performance
Ultra-low capacitance of 0.9 pF at 3 V, 1 MHz
Low forward voltage drop
High switching speed
Optimized for high-frequency applications
Robust and reliable design
Product Advantages
Suitable for high-frequency circuits
Excellent RF performance
Compact package
Reliable operation
Key Technical Parameters
Operating temperature up to 150°C
Power dissipation up to 100 mW
Peak reverse voltage up to 30 V
Forward current up to 100 mA
Resistance of 1 Ohm at 5 mA, 100 MHz
Quality and Safety Features
RoHS compliant
Reliable and robust design
Compatibility
Suitable for a wide range of high-frequency applications
Application Areas
Radio frequency (RF) circuits
Wireless communications
Switching power supplies
Instrumentation and test equipment
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent high-frequency performance
Low capacitance for improved circuit efficiency
Compact and reliable package
Wide operating temperature range
Suitable for a variety of high-frequency applications