Manufacturer Part Number
BAR64-03WE6327
Manufacturer
Infineon Technologies
Introduction
The BAR64-03WE6327 is a high-frequency PIN diode from Infineon Technologies, designed for use in various RF applications.
Product Features and Performance
Operates at high frequencies up to 100 MHz
Low forward resistance of 1.35 Ohms at 100 mA
Capable of handling a maximum current of 100 mA
Exhibits a low capacitance of 0.35 pF at 20 V, 1 MHz
Supports a peak reverse voltage of 150 V
Product Advantages
Excellent high-frequency performance
Compact SOD-323 package
Robust design for reliable operation
Suitable for a wide range of RF applications
Key Technical Parameters
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 250 mW
Capacitance @ Vr, F: 0.35 pF @ 20 V, 1 MHz
Voltage Peak Reverse (Max): 150 V
Diode Type: PIN Single
Resistance @ If, F: 1.35 Ohm @ 100 mA, 100 MHz
Current Max: 100 mA
Quality and Safety Features
Manufactured by the reputable Infineon Technologies
Adheres to industry standards and safety regulations
Compatibility
Suitable for a wide range of RF and high-frequency applications
Application Areas
RF amplifiers and switches
Mixers and modulators
Attenuators and phase shifters
Instrumentation and test equipment
Product Lifecycle
This product is currently in active production and available for purchase.
Replacement or upgraded models may be introduced in the future, but the BAR64-03WE6327 is expected to remain a viable option for the foreseeable future.
Key Reasons to Choose This Product
Excellent high-frequency performance with low forward resistance and capacitance
Robust design and reliable operation, even at high temperatures
Compact SOD-323 package for easy integration into various RF circuits
Manufactured by the reputable Infineon Technologies, ensuring quality and safety
Suitable for a wide range of RF and high-frequency applications
