Manufacturer Part Number
BAR63-02LE6327
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a RF diode, from Infineon Technologies.
Product Features and Performance
Operates at a maximum junction temperature of 150°C
Supports a maximum power dissipation of 250 mW
Exhibits a low capacitance of 0.3pF at 5V, 1MHz
Rated for a maximum peak reverse voltage of 50V
Categorized as a single PIN diode
Supports a maximum current of 100 mA
Product Advantages
Robust thermal performance allowing high-temperature operation
Low capacitance enabling high-frequency applications
High reverse voltage capability
Compact SOD-882 package
Key Technical Parameters
Operating Temperature: 150°C (TJ) maximum
Power Dissipation: 250 mW maximum
Capacitance: 0.3pF @ 5V, 1MHz
Peak Reverse Voltage: 50V maximum
Diode Type: Single PIN
Maximum Current: 100 mA
Quality and Safety Features
Not applicable (no specific information provided)
Compatibility
No specific compatibility information provided
Application Areas
Suitable for high-frequency, high-temperature RF applications
Product Lifecycle
No information provided about product lifecycle or availability of replacements/upgrades
Key Reasons to Choose This Product
Robust thermal performance for high-temperature operation
Low capacitance enabling high-frequency operation
High reverse voltage capability
Compact package size
BAR63-02GMC