BA592E6327 - Infineon Technologies

Manufacturer Part Number

BA592E6327

Manufacturer

Infineon Technologies

Introduction

High-performance RF small-signal diode for various radio frequency applications.

Product Features and Performance

Extremely low capacitance of 1.1 pF at 3V, 1 MHz

Low forward resistance of 500 mΩ at 10 mA, 100 MHz

Capable of handling up to 100 mA of current

Operates at temperatures up to 150°C

Product Advantages

Excellent high-frequency performance

Low power consumption

Compact and space-saving package

Robust and reliable operation

Key Technical Parameters

Voltage Peak Reverse (Max): 35V

Diode Type: Standard Single

Operating Temperature: 150°C (TJ)

Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz

Resistance @ If, F: 500mOhm @ 10mA, 100MHz

Current Max: 100 mA

Quality and Safety Features

Reliable operation in demanding conditions

Robust design for long-term durability

Compatibility

Suitable for a wide range of radio frequency applications

Application Areas

RF signal processing circuits

RF amplifiers

Mixers

Detectors

Limiters

Switches

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Several Key Reasons to Choose This Product

Exceptional high-frequency performance with low capacitance and resistance

Ability to handle high current up to 100 mA

Reliable and robust operation at high temperatures up to 150°C

Compact and space-saving package design

Compatibility with a wide range of RF applications