Manufacturer Part Number
AUIRS21811STR
Manufacturer
Infineon Technologies
Introduction
Power Management Integrated Circuit for driving IGBTs and N-Channel MOSFETs in half-bridge configurations
Product Features and Performance
Non-Inverting Input
Independent Dual Channels
High Side Voltage up to 600V
Peak Output Current 1.9A Source, 2.3A Sink
Fast Rise Time of 60ns
Fast Fall Time of 35ns
Product Advantages
Suited for high-side driver applications
Integrated under-voltage lockout protection
High voltage rating suitable for motor drives and power conversion
Key Technical Parameters
Supply Voltage Range 10V to 20V
Logic Levels VIL 0.8V, VIH 2.5V
Bootstrap Capability for High Side Drive
Operating Temperature Range -40°C to 150°C
Surface Mount Package in 8-SOIC
Quality and Safety Features
Extended temperature range for harsh environments
Robust construction for long-term reliability
Compatibility
Compatible with IGBTs and N-Channel MOSFETs
Suitable for applications in half-bridge circuits
Application Areas
Motor Control
Power Conversion Systems
Inverters
Switch Mode Power Supplies
Product Lifecycle
Not For New Designs indicating a transitioning product
Potential future replacement or upgrade options should be considered
Several Key Reasons to Choose This Product
High integration for compact design
Efficient power handling for energy savings
Reliable performance in extreme conditions
Compatible with a broad range of high voltage power components
Optimized for high-frequency operation
AUIRS21271STRPBFIR