AUIRS2117STR - Infineon Technologies

Manufacturer Part Number

AUIRS2117STR

Manufacturer

Infineon Technologies

Introduction

High-Side driver integrated circuit for IGBT and N-Channel MOSFET control in automotive applications

Product Features and Performance

Single high-side driver configuration for IGBT and N-Channel MOSFET gates

Optimized for low and high switching speeds

Product Advantages

High-voltage capability with a 600 V maximum bootstrap voltage

Efficient current delivery with peak output source of 290 mA and sink of 600 mA

Fast switching times with typical rise and fall times of 75 ns and 25 ns, respectively

Key Technical Parameters

Driven Configuration: High-Side

Channel Type: Single

Number of Drivers: 1

Supply Voltage Range: 10V to 20V

Logic Voltage Levels: VIL 6V, VIH 9.5V

Current - Peak Output: Source 290mA, Sink 600mA

Operating Temperature Range: -40°C to 150°C

High Side Voltage - Max (Bootstrap): 600V

Rise/Fall Time (Typical): 75ns/25ns

Quality and Safety Features

AEC-Q100 qualified for automotive reliability standards

Compatibility

Compatible with a range of IGBTs and N-Channel MOSFETs

Application Areas

Suited for automotive power management and control systems

Product Lifecycle

Classified under "Not For New Designs" indicating a shift towards newer alternatives

Replacement and upgrade options may be available for newer designs

Several Key Reasons to Choose This Product

AEC-Q100 certification assures automotive industry compliance

Designed for high-voltage applications up to 600V which is ideal for various automotive systems

High-temperature operation capability ensuring stability and performance in harsh conditions

Fast switching capability crucial for efficient operation in power electronics systems

Automotive-grade reliability and robustness