Manufacturer Part Number
AUIRGDC0250
Manufacturer
Infineon Technologies
Introduction
IGBT (Insulated-Gate Bipolar Transistor) power semiconductor device
Designed for high-power, high-voltage switching applications
Product Features and Performance
High voltage rating up to 1200V
High current rating up to 141A
Low on-state voltage drop of 1.57V @ 33A
Fast switching speed with turn-off time of 485ns
Low switching energy of 15mJ (turn-off)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and reliability for high-power applications
Robust design for harsh operating environments
Optimized for use in motor drives, power supplies, and other power conversion systems
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 141A
Collector Current Pulsed (Max): 99A
On-state Voltage Drop: 1.57V @ 15V, 33A
Gate Charge: 227nC
Switching Energy (Turn-off): 15mJ
Quality and Safety Features
RoHS3 compliant
Housed in SUPER-220 (TO-273AA) through-hole package
Compatibility
Suitable for use in a wide range of high-power, high-voltage applications
Application Areas
Motor drives
Power supplies
Inverters
Uninterruptible Power Supplies (UPS)
Welding equipment
Industrial automation
Product Lifecycle
Current production model
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
High power and voltage handling capabilities
Excellent efficiency and reliability
Fast switching speed and low switching losses
Robust design for harsh environments
RoHS compliance for environmental sustainability
Wide range of compatible applications
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