Manufacturer Part Number
AUIRFU8405
Manufacturer
Infineon Technologies
Introduction
High-power N-channel MOSFET transistor
Designed for use in high-frequency switching applications
Product Features and Performance
Optimized for high-speed, high-efficiency power conversion
Extremely low on-state resistance (Rds(on))
Fast switching speed and low gate charge
Capable of handling high continuous drain current
Product Advantages
Excellent thermal performance
High power density
Robust and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Maximum Gate-Source Voltage (Vgs(max)): ±20 V
On-State Resistance (Rds(on)): 1.98 mΩ @ 90 A, 10 V
Continuous Drain Current (Id): 100 A @ 25°C
Input Capacitance (Ciss): 5171 pF @ 25 V
Power Dissipation (Tc): 163 W
Quality and Safety Features
Compliance with relevant safety and quality standards
Designed for reliable and long-lasting operation
Compatibility
Suitable for use in a wide range of high-power switching applications
Application Areas
Power supplies
Motor drives
Electric vehicles
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in active production and widely available
Replacement or upgrade options may become available in the future as technology evolves
Several Key Reasons to Choose This Product
Excellent electrical performance, including extremely low on-state resistance and fast switching speed
Robust and reliable design capable of handling high continuous drain current
Optimized for high-efficiency, high-power switching applications
Proven track record of reliability and performance from a leading semiconductor manufacturer