AUIRFS8409-7P - Infineon Technologies

Manufacturer Part Number

AUIRFS8409-7P

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET with ultra-low on-resistance for power switching applications

Product Features and Performance

Ultra-low on-resistance of 0.75 mΩ @ 100 A, 10 V

High current capability of 240 A continuous drain current at 25°C

Low gate charge of 460 nC @ 10 V

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent efficiency and thermal performance

Enables high-power density designs

Suitable for high-current, high-frequency switching applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 40 V

Gate-to-Source Voltage (VGS): ±20 V

Threshold Voltage (VGS(th)): 3.9 V @ 250 A

Input Capacitance (Ciss): 13,975 pF @ 25 V

Power Dissipation (Pd): 375 W at 25°C

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Suitable for surface mount applications

Compatible with D2PAK (7-lead) package

Application Areas

Power supplies

Motor drives

Inverters

Battery chargers

Industrial and consumer electronics

Product Lifecycle

This product is an actively supported and available MOSFET solution from Infineon.

Key Reasons to Choose This Product

Exceptional efficiency and power density for high-performance power switching

Industry-leading low on-resistance for reduced power losses

Wide operating temperature range for reliable operation in demanding environments

Optimized for high-current, high-frequency switching applications