Manufacturer Part Number
AUIRFR4615TRL
Manufacturer
Infineon Technologies
Introduction
High-performance n-channel enhancement mode power MOSFET in D-PAK (TO-252AA) package
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss): 150V
Maximum gate-to-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 42mΩ @ 21A, 10V
Continuous drain current (Id): 33A @ 25°C
Input capacitance (Ciss): 1750pF @ 50V
Power dissipation (Tc): 144W
Product Advantages
Excellent thermal performance
High breakdown voltage
Low on-state resistance
Suitable for high-frequency and high-power applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET type: N-channel enhancement mode
Threshold voltage (Vgs(th)): 5V @ 100A
Gate charge (Qg): 26nC @ 10V
Mounting type: Surface mount
Quality and Safety Features
RoHS3 compliant
Hermetically sealed D-PAK (TO-252AA) package
Compatibility
Suitable for a wide range of power conversion, motor control, and switching applications
Application Areas
Switching power supplies
Inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely used component
Replacement or upgraded products may be available in the future
Key Reasons to Choose This Product
Excellent thermal and electrical performance
Robust and reliable design
Suitable for high-power and high-frequency applications
RoHS3 compliance for environmental sustainability
AUIRFR4105TRPBFIR