Manufacturer Part Number
AUIRFN8459TR
Manufacturer
Infineon Technologies
Introduction
High-performance dual N-channel MOSFET in a compact PowerTDFN (5x6) package
Product Features and Performance
Optimized for high-frequency, high-power density applications
Low on-resistance (5.9 mΩ) for high efficiency
High current capability (50 A continuous)
Low gate charge (60 nC) for fast switching
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Excellent thermal performance
Compact and space-saving package
Efficient power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 40 V
On-Resistance (Rds(on)): 5.9 mΩ @ 40 A, 10 V
Continuous Drain Current (Id): 50 A @ 25°C
Input Capacitance (Ciss): 2250 pF @ 25 V
Gate Threshold Voltage (Vgs(th)): 3.9 V @ 50 A
Quality and Safety Features
RoHS3 compliant
Stringent quality control and testing
Compatibility
Suitable for a wide range of high-frequency, high-power density applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Telecommunications equipment
Industrial automation
Product Lifecycle
Current production model, no plans for discontinuation
Ongoing support and availability of replacements or upgrades
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and space-saving package
Reliable and robust design
Suitable for a wide range of high-frequency, high-power applications
Backed by Infineon's extensive expertise in power semiconductor technology