Manufacturer Part Number
AUIRF4905S
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
D2PAK Manufacturer's Packaging
Surface Mount Mounting Type
TO-263-3, DPak (2 Leads + Tab), TO-263AB Package / Case
D2PAK Supplier Device Package
HEXFET Series
Tube Packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 42 A, 10 V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 42 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Power Dissipation (Max): 200 W (Tc)
P-Channel FET Type
Vgs(th) (Max) @ Id: 4 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 10 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Product Advantages
RoHS3 Compliant
High current handling capability
Low on-resistance
Wide voltage range
Key Technical Parameters
Operating Temperature Range: -55°C to 150°C
Drain to Source Voltage (Vdss): 55 V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 42 A, 10 V
Current Continuous Drain (Id) @ 25°C: 42 A
Power Dissipation (Max): 200 W
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
TO-263-3, DPak (2 Leads + Tab), TO-263AB Package
Application Areas
Suitable for various power electronics applications, such as:
Switch-mode power supplies
Motor drives
Solar inverters
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely available MOSFET solution.
Replacement or upgraded products are readily available from Infineon.
Several Key Reasons to Choose This Product
High current handling capability up to 42 A
Low on-resistance of 20 mOhm
Wide voltage range up to 55 V
RoHS3 compliance for environmental friendliness
Proven reliability and performance in various power electronics applications
Availability of replacement and upgraded products from the manufacturer