2N7002DWH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

2N7002DWH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

The 2N7002DWH6327XTSA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies.

Product Features and Performance

Dual N-Channel MOSFET configuration

Low on-resistance (RDS(on) = 3Ω @ 500mA, 10V)

Low input capacitance (Ciss = 20pF @ 25V)

High drain current capability (ID = 300mA @ 25°C)

Wide operating temperature range (-55°C to 150°C)

Low gate charge (Qg = 0.6nC @ 10V)

Logic level gate (Vgs(th) = 2.5V @ 250μA)

Product Advantages

Efficient power switching

Low power consumption

Compact surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Drain to Source Voltage (VDS): 60V

Continuous Drain Current (ID): 300mA @ 25°C

On-Resistance (RDS(on)): 3Ω @ 500mA, 10V

Input Capacitance (Ciss): 20pF @ 25V

Gate Charge (Qg): 0.6nC @ 10V

Gate Threshold Voltage (Vgs(th)): 2.5V @ 250μA

Quality and Safety Features

RoHS3 compliant

Reliable performance under wide temperature range

Compatibility

Suitable for a variety of electronic circuits and devices

Application Areas

Power management circuits

Switching circuits

Logic level control applications

Product Lifecycle

Currently available

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Efficient power switching with low on-resistance

Low power consumption and compact package

Wide operating temperature range for versatile applications

Reliable performance with RoHS3 compliance

Suitable for a variety of electronic circuits and devices