Manufacturer Part Number
2EDF7275KXUMA2
Manufacturer
Infineon Technologies
Introduction
High-performance gate driver for power MOSFETs
Product Features and Performance
Independent half-bridge gate driver
Optimized for N-Channel and P-Channel MOSFETs
High peak output current capability (Source: 4A, Sink: 8A)
Fast rise and fall times (Rise: 6.5ns, Fall: 4.5ns)
Integrated under-voltage lockout (UVLO)
Over-temperature protection
Over-current protection
Product Advantages
High efficiency with fast switching times
Robust design for industrial applications
Enhanced reliability with built-in protection features
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage Supply: 20V
Logic Voltage VIL, VIH: -, 1.65V
Current Peak Output (Source, Sink): 4A, 8A
Input Type: Non-Inverting
Operating Temperature: -40°C ~ 125°C
Package / Case: 13-TFLGA
Supplier Device Package: PG-TFLGA-13-1
Quality and Safety Features
Under-voltage lockout
Thermal shutdown protection
Over-current protection
Compatibility
Compatible with various N-Channel and P-Channel MOSFETs
Ideal for high-speed switching applications
Application Areas
Motor control
Power conversion
Renewable energy systems
High-efficiency power supply units
Product Lifecycle
Product status: Active
Ongoing support with no near-term discontinuation
Future upgrades and replacements available
Several Key Reasons to Choose This Product
Infineon's reputation for quality and reliability in power management
Superior thermal performance for extended operation
High current driving capability for demanding applications
Designed for ease of integration with various MOSFET configurations
Support for a wide range of operating temperatures, making it suitable for industrial and automotive applications
Availability of technical support and documentation from Infineon