1EDN7511BXUSA1 - Infineon Technologies

Manufacturer Part Number

1EDN7511BXUSA1

Manufacturer

Infineon Technologies

Introduction

EiceDriver™ Low-Side Gate Driver for MOSFETs

Product Features and Performance

Power Management IC for N-Channel, P-Channel MOSFET driving

Single Channel Output

High peak current source/sink capability

Fast rise and fall times for efficient switching

Supports 4.5V to 20V supply voltages

Capable of driving large capacitive loads

Tape & Reel packaging for automated assembly

SOT-23-6 package for compact PCB layouts

Product Advantages

Enhanced power efficiency due to fast switching

High system reliability with robust driver design

Optimized for low-side MOSFET gate driving

Ease of use with inverting and non-inverting inputs

Key Technical Parameters

Driven Configuration: Low-Side

Number of Drivers: 1

Gate Type: N-Channel, P-Channel MOSFET

Voltage - Supply: 4.5V ~ 20V

Logic Voltage - VIL, VIH: 1.2V, 1.9V

Current - Peak Output (Source, Sink): 4A, 8A

Rise / Fall Time (Typ): 6.5ns, 4.5ns

Operating Temperature: -40°C ~ 150°C (TJ)

Quality and Safety Features

Extended operating temperature range for harsh environments

High current drive capability for robust operation

Compatibility

Compatible with N-Channel and P-Channel MOSFETs

Surface Mount technology for compatibility with modern PCB designs

Application Areas

DC-DC Converters

Motor Control Systems

Power Supply Units

Switching Regulators

Product Lifecycle

Active status, not near discontinuation

Availability of replacements or upgrades to similar Infineon EiceDriver™ models

Several Key Reasons to Choose This Product

High efficiency gate driving capabilities

Strong peak output currents for high-drive strength

Fast switching times to minimize power losses

Wide operating voltage range suitable for various applications

High temperature resilience for reliability in extreme conditions

Compact footprint for space-constrained applications

Support from reputable manufacturer Infineon Technologies