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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single2N3117
2N3117 Image
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See specifications for product details.

2N3117 - Central Semiconductor

Manufacturer Part Number
2N3117
Manufacturer
Central Semiconductor
Allelco Part Number
32D-2N3117
ECAD Model
Parts Description
TRANS NPN 60V 0.05A TO-18
Detailed Description
Package
TO-206AA, TO-18-3 Metal Can
Data sheet
2N3117.pdf
RoHs Status
Lead free / RoHS Compliant
In stock: 12869

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Specifications

2N3117 Tech Specifications
Central Semiconductor - 2N3117 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor - 2N3117

Product Attribute Attribute Value  
Manufacturer Central Semiconductor  
Voltage - Collector Emitter Breakdown (Max) 60V  
Vce Saturation (Max) @ Ib, Ic 350mV @ 100µA, 1mA  
Transistor Type NPN  
Supplier Device Package TO-18  
Series -  
Power - Max 360mW  
Packaging Bulk  
Package / Case TO-206AA, TO-18-3 Metal Can  
Other Names 2N3117 LEAD FREE
2N3117 PBFREE
 
Product Attribute Attribute Value  
Operating Temperature -65°C ~ 200°C (TJ)  
Mounting Type Through Hole  
Moisture Sensitivity Level (MSL) 1 (Unlimited)  
Manufacturer Standard Lead Time 16 Weeks  
Lead Free Status / RoHS Status Lead free / RoHS Compliant  
Frequency - Transition -  
Detailed Description Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18  
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10µA, 5V  
Current - Collector Cutoff (Max) 10nA (ICBO)  
Current - Collector (Ic) (Max) 50mA  

Parts with Similar Specifications

The three parts on the right have similar specifications to Central Semiconductor 2N3117

Product Attribute 2N3117 2N3117 2N3251A 2N3250
Part Number 2N3117 2N3117 2N3251A 2N3250
Manufacturer Central Semiconductor AMI Semiconductor / ON Semiconductor Microsemi Corporation Central Semiconductor
Voltage - Collector Emitter Breakdown (Max) 60V - 60 V 40V
Frequency - Transition - - - 250MHz
Power - Max 360mW - 360 mW 360mW
Other Names 2N3117 LEAD FREE
2N3117 PBFREE
2N3117-DIE
2N3117MT
2N3117MT-ND
FC2N3117
FC2N3117-ND
- 2N3250 LEAD FREE
2N3250 PBFREE
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10µA, 5V - 100 @ 10mA, 1V 50 @ 10mA, 1V
Mounting Type Through Hole - Through Hole Through Hole
Vce Saturation (Max) @ Ib, Ic 350mV @ 100µA, 1mA - 500mV @ 5mA, 50mA 500mV @ 5mA, 50mA
Detailed Description Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18 Bipolar (BJT) Transistor - Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 360mW Through Hole TO-18
Manufacturer Standard Lead Time 16 Weeks 4 Weeks - 16 Weeks
Current - Collector Cutoff (Max) 10nA (ICBO) - 10µA (ICBO) -
Package / Case TO-206AA, TO-18-3 Metal Can - TO-205AD, TO-39-3 Metal Can TO-206AA, TO-18-3 Metal Can
Current - Collector (Ic) (Max) 50mA - 200 mA 200mA
Packaging Bulk - - Bulk
Supplier Device Package TO-18 - TO-39 (TO-205AD) TO-18
Series - * - -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 3 (168 Hours) - 1 (Unlimited)
Operating Temperature -65°C ~ 200°C (TJ) - -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Transistor Type NPN - PNP PNP
Lead Free Status / RoHS Status Lead free / RoHS Compliant Lead free / RoHS Compliant - Lead free / RoHS Compliant

2N3117 Datasheet PDF

Download 2N3117 pdf datasheets and Central Semiconductor documentation for 2N3117 - Central Semiconductor.

Datasheets
2N3117.pdf

Shipment

Delivery Time

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Delivery Cost

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  2. Use our account for the shipment. Refer to the table below for the approximate charges.
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Delivery Method

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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2N3117 Image

2N3117

Central Semiconductor
32D-2N3117

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