Manufacturer Part Number
2SC5010-T1-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
High-Frequency NPN Bipolar Transistor
Product Features and Performance
High frequency operation up to 12GHz
Low noise figure of 1.5dB typical at 2GHz
High gain of 8.5dB
High current handling capability up to 30mA
Product Advantages
Suitable for RF amplifier and oscillator applications
Reliable surface mount package
Wide operating temperature range up to 150°C
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 6V
Collector Current (Max): 30mA
Power Dissipation (Max): 125mW
DC Current Gain (Min): 75 @ 10mA, 3V
Transition Frequency: 12GHz
Quality and Safety Features
Meets relevant industry standards and certifications
Robust and reliable performance
Compatibility
Compatible with standard surface mount assembly processes
Application Areas
RF amplifiers
Oscillators
Wireless communication systems
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose This Product
High-frequency performance for demanding RF applications
Low noise and high gain for improved system performance
Reliable surface mount package for ease of integration
Wide temperature range for use in diverse environments