Manufacturer Part Number
2SC5006-T1-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
This is a discrete semiconductor product, specifically a bipolar junction transistor (BJT) designed for RF (radio frequency) applications.
Product Features and Performance
Surface mount package (SOT-523)
Operating temperature up to 150°C
Power handling up to 125mW
Collector-emitter breakdown voltage up to 12V
Collector current up to 100mA
DC current gain (hFE) of at least 80 at 7mA, 3V
Transition frequency of 4.5GHz
Gain of 9dB
Noise figure of 1.2dB at 1GHz
Product Advantages
Suitable for high-frequency RF circuits and amplifiers
Compact surface mount package for efficient use of board space
High temperature operation capability
Key Technical Parameters
Manufacturer Part Number: 2SC5006-T1-A
Package: SOT-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Max: 125mW
Voltage Collector Emitter Breakdown (Max): 12V
Current Collector (Ic) (Max): 100mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Frequency Transition: 4.5GHz
Gain: 9dB
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Quality and Safety Features
Manufactured by a reputable semiconductor company, CEL
Suitable for various industrial and consumer applications
Compatibility
This NPN bipolar junction transistor can be used in a wide range of RF and high-frequency circuits and amplifiers.
Application Areas
RF amplifiers
Wireless communication devices
High-frequency electronic equipment
Product Lifecycle
This product is an active and widely used RF transistor in the market.
Replacement or upgraded versions may be available in the future.
Several Key Reasons to Choose This Product
Excellent high-frequency performance with a transition frequency of 4.5GHz
Compact surface mount package for efficient board layout
Ability to operate at high temperatures up to 150°C
Reliable manufacturing from a reputable semiconductor company
Suitability for a wide range of RF and high-frequency applications