2SC4536-T1-AZ - CEL

Manufacturer Part Number

2SC4536-T1-AZ

Manufacturer

CEL (California Eastern Laboratories)

Introduction

High-frequency NPN bipolar junction transistor (BJT)

Designed for use in radio frequency (RF) circuits and applications

Product Features and Performance

Optimized for RF performance

High transition frequency of 5.5 GHz

Low noise figure of 2 dB at 1 GHz

Power handling capacity of up to 2 watts

Capable of operating at collector currents up to 250 mA

Product Advantages

Excellent high-frequency characteristics

Suitable for a variety of RF circuit designs

Reliable performance in high-power applications

Compact surface-mount packaging

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 15 V

DC Current Gain (hFE): Minimum of 40 at 50 mA, 10 V

Gain: 7 dB

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

Manufactured using reliable and robust semiconductor processes

Tested and screened to meet quality and reliability standards

Compatibility

Compatible with standard surface-mount (SMT) assembly processes

Suitable for use in a wide range of RF circuits and applications

Application Areas

Radio frequency (RF) amplifiers

Wireless communication systems

Industrial and commercial electronics

Test and measurement equipment

Product Lifecycle

Currently in active production

No immediate plans for discontinuation

Upgrades or replacements may become available in the future as technology evolves

Key Reasons to Choose This Product

Excellent high-frequency performance for RF circuits

Reliable and efficient power handling capabilities

Compact and easy-to-use surface-mount packaging

Proven quality and reliability from a reputable manufacturer

Suitable for a wide range of RF applications and designs