Manufacturer Part Number
2SC4226-T1-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) for RF applications
Product Features and Performance
NPN Transistor
High Frequency Transition Frequency of 4.5GHz
Low Noise Figure of 1.2dB @ 1GHz
Power Handling of 150mW
Collector-Emitter Breakdown Voltage of 12V
Collector Current of 100mA
DC Current Gain of 40 @ 7mA, 3V
Product Advantages
Suitable for high-frequency RF circuits
Low noise performance
High power handling capability
Small surface mount package
Key Technical Parameters
Transistor Type: NPN
Transition Frequency: 4.5GHz
Noise Figure: 1.2dB @ 1GHz
Power Dissipation: 150mW
Collector-Emitter Breakdown Voltage: 12V
Collector Current: 100mA
DC Current Gain: 40 @ 7mA, 3V
Quality and Safety Features
Designed and manufactured to high quality standards
Robust and reliable performance
Compatibility
Suitable for a wide range of RF circuit designs
Can be used in surface mount applications
Application Areas
RF amplifiers
Oscillators
Mixers
Switches
Drivers
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
High frequency performance
Low noise characteristics
Compact surface mount package
Reliable and robust design
Suitable for a variety of RF circuit applications
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