Manufacturer Part Number
2SC3356-T1B-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
This is a high-performance RF transistor from CEL, suitable for use in a variety of RF applications.
Product Features and Performance
Operates at up to 150°C junction temperature
Handles up to 200mW of power
Supports voltages up to 12V
Provides a maximum collector current of 100mA
Offers a minimum DC current gain of 50 at 20mA, 10V
Achieves a transition frequency of 7GHz
Provides a gain of 13dB
Features a low noise figure of 1.1dB at 1GHz
Product Advantages
Excellent high-frequency performance
Compact surface mount package
Lead-free and RoHS compliant design
Reliable and durable construction
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 12V
Collector Current (Max): 100mA
Power Dissipation (Max): 200mW
Transition Frequency: 7GHz
Gain: 13dB
Noise Figure: 1.1dB @ 1GHz
Quality and Safety Features
Lead-free and RoHS compliant
Moisture Sensitivity Level 1 (Unlimited)
Compatibility
This RF transistor is compatible with a wide range of RF and wireless communication applications.
Application Areas
RF amplifiers
Wireless transceivers
Radio frequency identification (RFID) systems
Wireless sensor networks
Telecommunications equipment
Product Lifecycle
This RF transistor is an active and widely available product. There are no plans for discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Excellent high-frequency performance with a transition frequency of 7GHz
Compact and reliable surface mount package
Efficient power handling up to 200mW
Low noise figure of 1.1dB at 1GHz, making it suitable for sensitive RF applications
Lead-free and RoHS compliant design, ensuring environmental compliance
Proven reliability and long-term availability from a reputable manufacturer, CEL
